Progress in InGaAs–GaAs Selective-Area MOCVD Toward Photonic Integrated Circuits

The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BH’s) by a three-step technique are outlined, and a computational model is presented that predicts the enhancement behavior of selective-area MOCVD. Results are reviewed for several discrete and integrated photonic devices. These include low-threshold BH lasers, laser diodes integrated with either intracavity or external cavity modulators, dual-channel emitters integrated with both modulators and passive y-junction waveguides, and broad-band light-emitting diodes (LED’s).